Journal
SEMICONDUCTORS
Volume 55, Issue 3, Pages 346-353Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782621030027
Keywords
α -Ga2O3; ε -Ga2O3; polymorphic epitaxial films; chloride vapor-phase epitaxy; I– V characteristics; atmospheric humidity
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Funding
- Russian Science Foundation [20-79-10043]
- Russian Science Foundation [20-79-10043] Funding Source: Russian Science Foundation
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The research reveals that the electrical conductivity of alpha-Ga2O3 and alpha-Ga2O3/epsilon-Ga2O3 is significantly influenced by ambient humidity, with the effect varying at different temperatures.
The effect of ambient humidity on the electrical conductivity of alpha-Ga2O3 and alpha-Ga2O3/epsilon-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epitaxy on sapphire substrates. The contacts are made of Pt and Pt/Ti. It is discovered that the I-V characteristics of the Pt/alpha-Ga2O3/Pt and Pt/Ti/alpha-Ga2O3/epsilon-Ga2O3/Ti/Pt structures have a high sensitivity to atmospheric humidity in the temperature range of 25-100 degrees C. It is found that the effect of water vapor on the I-V characteristics is reversible, and the most significant current changes in the samples are observed at a relative humidity of RH >= 60%. As the temperature rises, the effect of atmospheric humidity on the I-V characteristics decreases and disappears at temperatures of T > 100 degrees C. The experimental results obtained are explained within the framework of the Grotthuss mechanism.
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