Simulation of enhancement-mode recessed-gate p-channel HFETs based on polarization-induced doping and an InGaN/GaN/AlGaN heterostructure

In this work, p-type polarization-induced doping (PID) recessed-gate p-channel InGaN/GaN/AlGaN heterostructure field-effect transistors (HFETs) are proposed. It is found that the current density of the device can be increased by introducing an InGaN/GaN/AlGaN heterojunction and p-type PID. The simulation results show that the current density can apparently be increased (from 3.42 mA mm(-1) to 7.31 mA mm(-1)) due to the increased hole concentration introduced by the InGaN/GaN/AlGaN heterojunction and the p-type PID. Different threshold voltages can be obtained by adjusting the GaN channel thickness, and normally-off p-channel HFETs with a negative V (TH) of -1 V were produced when a 6 nm GaN channel thickness was retained. These results may provide some reference information for the design of E-mode high-performance p-channel GaN devices.

Automated summary

This work introduces a new type of p-type polarization-induced doping recessed-gate p-channel InGaN/GaN/AlGaN heterostructure field-effect transistor, which increases the current density of the device by introducing different material structures and doping methods, and also enables the adjustment of threshold voltages. This study provides reference information for the design of E-mode high-performance p-channel GaN devices.