Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 36, Issue 5, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6641/abefa3
Keywords
AlGaN; GaN; high electron mobility transistors (HEMTs); gate field plate; breakdown
Categories
Funding
- National Natural Science Foundation of China [61674117, 61974108]
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By comparing the effects of various gate field plate structures on AlGaN/GaN HEMTs, it is found that different structures have different impacts on the device performance. The breakdown characteristics and the cut-off frequency characteristic need to be balanced according to actual applications.
Many field plate structures have been applied to improve the breakdown voltage in high electron mobility transistors (HEMTs). In this paper, the effects of various gate field plate structures on DC and RF performance of AlGaN/GaN HEMTs have been compared. The devices were fabricated on a 3 in sapphire substrate with 0.8 mu m gate length, 3 mu m source-drain distance, and 50 mu m gate width. The results show that the discontinuous field plate structures can improve the cut-off frequency characteristics, but the breakdown characteristics will be weakened. And the increase of the field plate length can improve the breakdown characteristics. Thus, the breakdown characteristics and the cut-off frequency characteristic need to be balanced according to the actual applications by adjusting the length and the area of the field plate structure.
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