Journal
SCIENCE
Volume 372, Issue 6542, Pages 630-+Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.abf3789
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Funding
- European Union [794954]
- CogniGron research center (University of Groningen)
- Ubbo Emmius Funds (University of Groningen)
- China Scholarship Council
- Van Gogh travel grant
- Swedish Research council [2018-07152]
- Swedish Governmental Agency for Innovation Systems [2018-04969]
- Formas [2019-02496]
- Marie Curie Actions (MSCA) [794954] Funding Source: Marie Curie Actions (MSCA)
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This study found that ferroelectricity in hafnia-based thin films is closely related to oxygen voltammetry, as reversible oxygen vacancy migration is observed when the top electrode is oxygen reactive, with electrodes serving as sources and sinks of oxygen, and the dielectric layer acting as a fast conduit at millisecond time scales.
Unconventional ferroelectricity exhibited by hafnia-based thin films-robust at nanoscale sizes-presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. We investigated a La0.67Sr0.33MnO3/Hf0.5Zr0.5O2 capacitor interfaced with various top electrodes while performing in situ electrical biasing using atomic-resolution microscopy with direct oxygen imaging as well as with synchrotron nanobeam diffraction. When the top electrode is oxygen reactive, we observe reversible oxygen vacancy migration with electrodes as the source and sink of oxygen and the dielectric layer acting as a fast conduit at millisecond time scales. With nonreactive top electrodes and at longer time scales (seconds), the dielectric layer also acts as an oxygen source and sink. Our results show that ferroelectricity in hafnia-based thin films is unmistakably intertwined with oxygen voltammetry.
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