In-situ low-temperature synthesis of PS-ZrO2 hybrid films and their characterization for high-k gate dielectric application

We report a novel high-k hybrid material synthesized at low temperature using a simple sol-gel derived method compatible with organic large-area application. The homogeneous cross-linked organic-inorganic dielectric film is achieved by solution process and densified at 100 ?C. For the synthesis, styrene and zirconium isopropoxide are used as polystyrene and ZrO2 source, respectively. Also, the 3-trimetoxy-silyl-propyl-methacrylate was used as a coupling agent to link organic and inorganic phases. The hybrid films were deposited by dip coating and densified in-situ by polymerization and polycondensation of the organic and inorganic components. The hybrid materials were analyzed by FTIR, XPS, and TGA measurements to confirm the formation of the cross-linked hybrid material. Optical T and R spectroscopy, AFM, and SEM images demonstrated their optical properties, smooth surface, thickness, and high-quality films. The dielectric constant of 9.2 and leakage current around 10-7 A/cm2 was determined by analyzing the MIM capacitors electrical response, fabricated with the hybrid films as the insulator layer.

Automated summary

A novel high-k hybrid material was synthesized at low temperature using a sol-gel derived method, with a cross-linked organic-inorganic dielectric film achieved by solution process. The material exhibited a dielectric constant of 9.2, smooth surface, and high-quality films, confirmed through various characterization techniques. This hybrid material shows potential for organic large-area applications.