Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 15, Issue 12, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202100135
Keywords
cerous fluoride; contact resistivity; dopant-free; electron-selective contact; passivated contact; silicon solar cells
Funding
- National Natural Science Foundation of China [61774173]
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Dopant-free carrier-selective contacts have attracted attention for efficient c-Si photovoltaics due to their low-temperature simple process and better carrier selectivity. With the incorporation of CeF3 as the electron transport layer, a higher conversion efficiency of 21.27% has been achieved compared to 16.89% without CeF3. Utilizing lanthanide fluorides, including CeF3, offers a good choice for efficient and cost-effective electron-selective contacts for optical-electrical devices.
Dopant-free carrier-selective contacts have drawn intensive attention for efficient crystalline silicon (c-Si) photovoltaics due to the low-temperature simple process and better carrier selectivity. By incorporating a thermally evaporated dielectric film cerium fluoride (CeF3) as the electron transport layer (ETL) between a c-Si(n) and aluminum (Al) electrode, higher conversion efficiency of the crystalline silicon solar cell is obtained, which is 21.27% compared to 16.89% of a reference cell without CeF3. The insertion of an ultrathin CeF3 ETL helps in alleviating the strong Fermi-level pinning at the interface, leading to better electron transport with a low contact resistivity of 10.96 m omega cm(2). The morphology and element distribution of the interface are also investigated by high-resolution transmission electron microscopy (HRTEM). The primary results demonstrate that the utilization of kinds of lanthanide fluorides, including CeF3, offers a good choice for efficient and cost-effective electron-selective contacts for optical-electrical devices.
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