Enhancement of dielectric performance in BaZr0.02(Fe0.5Nb0.5)0.98O3 ceramics influenced by sintering temperatures

To obtain giant dielectric constant, the result of sintering progression on the electrical property of BaZr0.02(Fe0.5Nb0.5)(0.98)O-3 (BZFN) ceramics were explored. All sintered BZFN samples show single phase compound. The surface morphology was tuned by modifying the sintering temperature which acting significant job for getting the high dielectric constant. After the optimization of sintering temperature, we achieved giant dielectric constant (similar to 58653) for 1225 degrees C sintered sample with low dielectric loss (similar to 0.32). Zr doping suppresses the semiconducting behaviour which is assured by the reducing of dielectric loss. EDX analysis confirm the reoxidation reaction occur at grain boundaries. Impedance spectroscopy experiment has been performed to detect the signature of electrical heterogeneities inside the materials. At high and low frequency range two dielectric relaxations were detected which follows the Arrhenius equation.

Automated summary

By optimizing the sintering temperature, giant dielectric constant was achieved in the BZFN ceramics sample. Zr doping suppresses semiconducting behavior, reducing dielectric loss and hindering reoxidation reactions at grain boundaries. Impedance spectroscopy experiments detected electrical heterogeneities within the materials.