Journal
OPTICS EXPRESS
Volume 29, Issue 10, Pages 15013-15022Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.422621
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Funding
- H2020 Marie Sklodowska-Curie Actions [812818]
- European Research Council [759483]
- Fonds Wetenschappelijk Onderzoek [12ZB520N, 1S54418N]
- European Research Council (ERC) [759483] Funding Source: European Research Council (ERC)
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This paper demonstrates for the first time that a high-performance mode-locked laser can be achieved using chip scale silicon nitride waveguides with a butt-coupling integration technique.
Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high linear and nonlinear losses that limit the performance of these lasers. By extending such lasers with, for example, an external cavity, the performance can be increased considerably. In this paper, we demonstrate for the first time that a high-performance mode-locked laser can be achieved with a butt-coupling integration technique using chip scale silicon nitride waveguides. A platform-independent SiN/SU8 coupler design is used to couple between the silicon nitride external cavity and the III/V active chip. Mode-locked lasers at 2.18 GHz and 15.5 GHz repetition rates are demonstrated with Lorentzian RF linewidths several orders of magnitude smaller than what has been demonstrated on monolithic InP platforms. The RF linewidth was 31 Hz for the 2.18 GHz laser. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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