Journal
OPTICS EXPRESS
Volume 29, Issue 9, Pages 13722-13732Publisher
Optica Publishing Group
DOI: 10.1364/OE.421993
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Funding
- National Natural Science Foundation of China [12074264, 61775146, 61905148, 61935014, 61975136]
- Science and Technology Planning Project of Shenzhen Municipality [JCYJ20190808141011530, JCYJ20190808160205460, JCYJ20190808174201658]
- Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology [2020B1212030010]
- Guangdong Provincial Key Laboratory of Semiconductor Micro Display [2020B121202003]
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This study presents the nonlinear absorption of three Sb-related materials in the 2 μm waveband, showing their potential for use in photonic devices requiring ultrafast optical switching and modulation. The materials exhibited stable pulse durations, output powers, and signal-to-noise ratios, indicating their suitability for applications in Tm-doped fiber lasers.
We report, for the first time, the nonlinear absorption at the 2 mu m waveband of three Sb-related materials including two Sb compounds, GaSb and InSb, and one Sb alloy, Ge8Sb92. These saturable absorbers (SAs) were coated on tapered single mode fibers by the magnetron-sputtering deposition method. By incorporating these SAs into Tm-doped fiber lasers, ultrafast mode-locked solitons could be readily obtained. Stable pulse trains with 922 fs/753 fs/1005 fs pulse durations, 31.35 mW/37.70 mW/16.60 mW output powers, 93 dB/80 dB/92 dB signal-to-noise ratios were achieved with GaSb/InSb/Ge8Sb92, respectively. Our findings demonstrate that these materials can be widely used for photonic devices in the 2 mu m waveband where ultrafast optical switching and modulating are desired. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
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