4.5 Article

Graphene properties and applications in nanoelectronic

Journal

OPTICAL AND QUANTUM ELECTRONICS
Volume 53, Issue 4, Pages -

Publisher

SPRINGER
DOI: 10.1007/s11082-021-02839-6

Keywords

Graphene; Electronic structure; Electrical transport; Density of states; Graphene nanoribbon; Band structure

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The reduction in silicon-based device dimensions has led to significant advancements in electronic systems performance. Recent studies have explored the advantages and challenges of shrinking silicon devices, with many concluding that silicon technology is approaching its limits and new innovations are needed. Graphene emerges as a promising material for future nanoelectronics, offering unique properties and potential applications. This paper discusses various aspects of graphene, including production approaches, fundamental properties, defect types, application potentials, and electronic specifications of graphene nanoribbons. Simulation results indicate that properties such as band gap can be controlled by manipulating the width, defect, and doping concentration of graphene nanoribbons, making them suitable for graphene nanoribbon field effect transistors.
Reduction in the dimensions of silicon based devices has produced extraordinary developments in the performance of electronic systems. Recently, the advantages and challenges that caused by silicon devices shrinking have been investigated in many studies. Most of them have concluded that silicon technology is coming to an end and new innovations are required in the near future. Graphene is the promising candidate material as building blocks for nanoelectronic industry in order to silicon technology replacement. Graphene is first two dimensional materials that has significant potential in future nanoelectronic devices and other nanotechnology applications; therefore, it is an attractive subject for the researchers and scientists. Graphene is a carbon allotrope and is the basic element of other carbon allotropes. In this paper, main graphene production approaches are mentioned. The mechanical, thermal, optical, electrical, electronic and other fundamental properties of graphene are introduced. Moreover, it is considered as a novel material with numerous applications, which, we mention a few of important utilizations of graphene and its derivatives. Then, the different types of defects in graphene and their specifications, the methods of defect generation, defect healing, and properties of defective graphene are studied. Graphene nanoribbons and their geometric structures, fabrication approaches and electronic specifications are investigated. The effects of width, vacancy defect and doping concentration on the band structure of the graphene nanoribbons are extracted with ATK software in this paper. Simulation results showed that by increasing in the width, vacancy defect and doping concentration of nanoribbons, their band gap were decreased. These properties are suitable for controlling the channel of graphene nanoribbon field effect transistors.

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