Radiation-induced magnetoresistance oscillations with massive Dirac fermions

We report on a theoretical study on the rise of radiation-induced magnetoresistance oscillations in two-dimensional (2D) systems of massive Dirac fermions. We study the bilayer system of monolayer graphene and hexagonal boron nitride (h-BN/graphene) and the trilayer system of hexagonal boron nitride encapsulated graphene (h-BN/graphene/h-BN). We extend the radiation-driven electron orbit model that was previously devised to study the same oscillations in 2D systems of Schrodinger electrons (GaAs/AlGaAS heterostructure) to the case of massive Dirac fermions. In the simulations we obtain clear oscillations for radiation frequencies in the terahertz and far-infrared bands. We investigate also the power and temperatures dependence. For the former we obtain similar results as for Schrodinger electrons and predict the rise of zero resistance states. For the latter we obtain a similar qualitatively dependence but quantitatively different when increasing temperature. While in GaAs the oscillations are wiped out in a few degrees, interestingly enough, for massive Dirac fermions, we obtain observable oscillations for temperatures above 100 K and even at room temperature for the higher frequencies used in the simulations.

Automated summary

The study focuses on the radiation-induced magnetoresistance oscillations in 2D systems of massive Dirac fermions, specifically graphene and boron nitride. Clear oscillations were observed at terahertz and far-infrared frequencies, with predictions of zero resistance states at certain power levels. Interestingly, observable oscillations were found at temperatures above 100 K and even at room temperature for higher frequencies.