Capacitive coupled non-zero I-V and type-II memristive properties of the NiFe2O4-TiO2 nanocomposite

In the present work, we have demonstrated the capacitive coupled non-zero and type-II hysteresis behavior of nickel ferrite (NFO)-titanium oxide (TiO2) nanocomposite. For this, NFO nanoparticles (NPs) and TiO2 NPs were synthesized using hydrothermal and sol-gel method, respectively. The NFO-TiO2 nanocomposite was prepared using a solid-state reaction method and characterized by X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscope, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. The electrical results of the NFO-TiO2 memory device have shown non-zero I-V (unable to cross at origin), cross-over I-V and type-II hysteresis (tangential hysteresis loops) properties and their occurrence was depended upon the magnitude of the electrical stimulus. To further clarify the dominance of the memristive and type-II properties, we have calculated the charge-flux and non-transversal di/dv(t) characteristics of the device based on experimental results. The charge transport mechanisms were investigated and a plausible resistive switching mechanism was reported. Our investigations provide some insights to explain the non-zero and type-II hysteresis behavior of the memristive devices.

Automated summary

The present study demonstrated the capacitive coupled non-zero and type-II hysteresis behavior in nickel ferrite-titanium oxide nanocomposite, showing that the electrical properties are dependent on the magnitude of the electrical stimulus. By calculating charge-flux and characteristics, the dominance of memristive and type-II properties was further clarified, along with a proposed resistive switching mechanism. This research provides insights into explaining the non-zero and type-II hysteresis behavior of memristive devices.