Related references
Note: Only part of the references are listed.The Aromatic Thermosetting Copolyester for Schottky Diode Applications in a Wide Temperature Range
Ikram Orak et al.
JOURNAL OF ELECTRONIC MATERIALS (2020)
Effects of temperature, bias and frequency on the dielectric properties and electrical conductivity of Ni/SiO2/p-Si/Al MIS Schottky diodes
Naveen Kumar et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2020)
A Temperature Sensor Based on Al/p-Si/CuCdO2/Al Diode for Low Temperature Applications
A. Dere et al.
JOURNAL OF ELECTRONIC MATERIALS (2020)
Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode
P. R. Sekhar Reddy et al.
VACUUM (2020)
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
H. H. Gullu et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2020)
Effect of light on electrical and photoelectrical characteristics of Al/TiO2/p-Si Schottky diode
Abderhamane Boutelala et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2020)
Electrical and carrier transport properties of Au/Pr6O11/n-GaN MIS structure with a high-k rare-earth oxide interlayer at high temperature range
M. Uma et al.
VACUUM (2020)
Investigation of electrical and dielectric properties of epitaxially grown Au/n-GaAs/p-Si/Al heterojunction
A. Ashery et al.
OPTICAL AND QUANTUM ELECTRONICS (2020)
On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
Abdulmecit Turut
TURKISH JOURNAL OF PHYSICS (2020)
A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer
Sebahaddin Alptekin et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2019)
The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range
A. Turut et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2019)
Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range
Arvind Kumar et al.
SUPERLATTICES AND MICROSTRUCTURES (2019)
Investigation of the temperature-dependent electrical properties of Au/PEDOT:WO3/p-Si hybrid device
Mine Keskin et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2019)
The investigation of temperature dependent electrical characteristics of Au/Ni/β-(InGa)2O3 Schottky diode
Yixian Shen et al.
SUPERLATTICES AND MICROSTRUCTURES (2019)
Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
Karolina Kalbarczyk et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2019)
Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization
Manjari Garg et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2019)
The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures
M. Coskun et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2019)
Barrier height modification in Au/Ti/n-GaAs devices with a HfO2 interfacial layer formed by atomic layer deposition
Abdulkerim Karabulut
BULLETIN OF MATERIALS SCIENCE (2019)
Cu-Al-Mn shape memory alloy based Schottky diode formed on Si
E. Aldirmaz et al.
PHYSICA B-CONDENSED MATTER (2019)
A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo/4H-SiC Schottky contact
S. Toumi et al.
INDIAN JOURNAL OF PHYSICS (2019)
High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
J. Osvald et al.
APPLIED SURFACE SCIENCE (2018)
Temperature-dependent electronic charge transport characteristics at MoS2/p-type Ge heterojunctions
Seung Bae Son et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2018)
Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures
Yosef Badali et al.
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL (2018)
COMPARISON OFTHE Ti/n-GaAs SCHOTTKY CONTACTS' PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION
Osman Kahveci et al.
SURFACE REVIEW AND LETTERS (2017)
Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures
Abdulkerim Karabulut et al.
JOURNAL OF SEMICONDUCTORS (2017)
Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO2/4H-nSiC Schottky barrier diodes
Vibhor Kumar et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)
The investigation of the electrical properties of Fe3O4/n-Si heterojunctions in a wide temperature range
Ali Riza Deniz et al.
JOURNAL OF COLLOID AND INTERFACE SCIENCE (2016)
Embedded Nanoparticles in Schottky and Ohmic Contacts: A Review
Mohammad Saleh Gorji et al.
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES (2015)
Determination of the some electronic parameters of nanostructure copper selenide and Cu/Cu3Se2/n-GaAs/In structure
B. Guzeldir et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2015)
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
A. Turut et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2015)
The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs)
Cigdem Bilkan et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2015)
Highly-performing Ni/SiO2/Si MIS photodetector for NIR detecting applications
Hyunki Kim et al.
SENSORS AND ACTUATORS A-PHYSICAL (2015)
Current-Voltage and Capacitance-Conductance-Voltage Characteristics of Al/SiO2/p-Si and Al/Methyl Green (MG)/p-Si Structures
Songul Duman et al.
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE (2015)
Capacitance-conductance spectroscopic investigation of interfacial oxide layer in Ni/4H-SiC (0001) Schottky diode
Sanjeev K. Gupta et al.
PHYSICA B-CONDENSED MATTER (2014)
The physics and chemistry of the Schottky barrier height
Raymond T. Tung
APPLIED PHYSICS REVIEWS (2014)
Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts
K. Ejderha et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2011)
Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range
Oe. Vural et al.
CURRENT APPLIED PHYSICS (2010)
Frequency and voltage dependency of interface states and series resistance in Al/SiO2/p-Si MOS structure
Hong Xiao et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2010)
The distribution of barrier heights in MIS type Schottky diodes from current-voltage-temperature (I-V-T) measurements
Adem Tataroglu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2009)
Semiconductor junction gas sensors
Karin Potje-Kamloth
CHEMICAL REVIEWS (2008)
Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes
D. E. Yildiz et al.
JOURNAL OF APPLIED PHYSICS (2008)
Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101/n-Si and Sn/rhodamine-101/p-Si Schottky barrier diodes
Muzaffer Cakar et al.
JOURNAL OF APPLIED PHYSICS (2006)
Series resistance influence on intersecting behaviour of inhomogeneous Schottky diodes I-V curves
J Osvald
SOLID-STATE ELECTRONICS (2006)
Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes
E Ayyildiz et al.
APPLIED SURFACE SCIENCE (2005)
Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes
GP Ru et al.
SOLID-STATE ELECTRONICS (2005)
The importance of the neutral region resistance for the calculation of the interface state in Pb/p-Si Schottky contacts
ME Aydín et al.
PHYSICA B-CONDENSED MATTER (2004)
Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(100) Schottky contacts
S Karatas et al.
APPLIED SURFACE SCIENCE (2003)
Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process
M Biber et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2002)
The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes
M Biber et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2001)
Current transport at the p-InP|poly(pyrrole) interface
FE Jones et al.
JOURNAL OF APPLIED PHYSICS (2001)
Calculation of transmission coefficients at nonideal semiconductor interfaces characterized by a spatial distribution of barrier heights
MC Lonergan et al.
JOURNAL OF CHEMICAL PHYSICS (2001)
Share Paper
