Quantitative depth profiling of Al in SiC using time of flight-secondary ion mass spectroscopy

Historically, dynamic secondary ion mass spectroscopy (D-SIMS) has been used to quantitatively monitor the depth distribution of species present in low concentrations in samples/devices. We are not aware of any manuscript that describes the use of time of flight-secondary ion mass spectroscopy (ToF-SIMS) to perform quantitative analysis of aluminum present at low concentrations in silicon carbide (SiC) wafer substrates. In this paper, we will show that ToF-SIMS is able to replicate D-SIMS analysis. However, analysis at the lowest concentrations requires the collection of more spectral images at each depth. Tables of sputtering rates and sputtering yields, in addition to relative sensitivity factors are provided. We also highlight the benefits of ToF-SIMS analysis.

Automated summary

This paper demonstrates the use of Time of Flight-Secondary Ion Mass Spectrometry (ToF-SIMS) for quantitative analysis of low concentrations of aluminum in silicon carbide (SiC) wafer substrates, replicating the results of Dynamic Secondary Ion Mass Spectrometry (D-SIMS) analysis. More spectral images are required for analysis at the lowest concentrations, and the study provides tables of sputtering rates, sputtering yields, and relative sensitivity factors. The benefits of ToF-SIMS analysis are also highlighted in the research.