Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 125, Issue 16, Pages 8562-8569Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.0c11366
Keywords
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Funding
- Global Solar Plus Initiative
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The optical properties and results of photoelectrochemical analysis of n-type GaN were examined, revealing that the intermediate hole trap state associated with yellow luminescence could potentially be a carrier transfer site for water oxidation. It was estimated that the hole responsible for electrode corrosion follows a different pathway and is associated with the hole located at the valence band edge.
Photoelectrochemical water splitting is a solar-to-chemical energy conversion technique. However, when n-type nonoxide semiconductors are used as photoanodes, they corrode, which is a competitive reaction with water oxidation. To evaluate these competing reactions, the optical properties (photoluminescence) of n-type GaN were examined and compared with the results of a photoelectrochemical analysis. The intermediate hole trap state associated with the yellow luminescence of GaN was found to be a candidate for the carrier transfer site for water oxidation. The hole for electrode corrosion was estimated to have a different pathway from this trap site and to be associated with the hole located at the valence band edge.
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