Deposition of ZnO thin film by plasma sputtering method and study of changes in its physical and morphological properties under gamma irradiation with different doses

In this study, changes in the structural and optical properties of ZnO thin film prepared by plasma sputtering on glass substrate due to gamma radiation emitted by Co-60 have been experimentally investigated, and the relationship between ZnO semiconductor optical energy gap and the rate of transmission and absorption in the optical range (visible and ultraviolet) at different doses of gamma radiation is investigated. The experiments were performed in two intervals of medium and high doses. It is also shown that the transmission and the reflection rates, besides the amount of gamma ray dose, depend on the substrate temperature and also the percentage of oxygen used as admixture to the working gas (Ar). By irradiating ZnO thin films prepared by plasma sputtering by gamma rays of Co-60, the optical energy gap is generally reduced. Some typical SEM patterns showing special nanostructures are also presented.

Automated summary

This study experimentally investigated the changes in the structural and optical properties of ZnO thin film on glass substrate due to gamma radiation emitted by Co-60, and explored the relationship between ZnO semiconductor optical energy gap and the rates of transmission and absorption at different doses of gamma radiation. The results showed that factors such as dose, substrate temperature, and oxygen percentage in the working gas mixture can affect the transmission and reflection rates.