4.7 Article

Microwave dielectric high-entropy ceramic Li(Gd0.2Ho0.2Er0.2Yb0.2Lu0.2)GeO4 with stable temperature coefficient for low-temperature cofired ceramic technologies

Journal

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
Volume 93, Issue -, Pages 28-32

Publisher

JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2021.03.057

Keywords

High-entropy ceramic; Octahedral distortion; Microwave dielectric properties; Stable tau(f)

Funding

  1. Shenzhen Basic Research General Program [JCYJ20190808114618998]

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High-entropy ceramics exhibit excellent microwave dielectric properties and show potential applications in low-temperature cofired ceramic technologies.
High-entropy ceramics are new single-phase materials with at least four cation or anion types. Their large configurational entropy is believed to enhance the simultaneous solubility of many components, which can be used to optimize certain properties. In this work, a high-entropy oxide, Li(Gd0.2Ho0.2Er0.2Yb0.2Lu0.2)GeO4 (LRG) was explored as a microwave dielectric ceramic for low temperature cofired ceramic technologies. The LRG high-entropy ceramic with an olivine structure formed in the sintering temperature range of 1020-1100 degrees C. The minimal distortion (5 x 10(-4) ) of the [RO6] octahedron led to a stable temperature coefficient of resonant frequency (tau(f)) of -5.3 to -2.9 ppm/ degrees C. Optimal microwave dielectric properties were achieved in the high-entropy ceramics at 1080 degrees C for 4 h with a relative density of 94.9%, a relative permittivity (epsilon(r)) of 7.2, and a quality factor (Qxf) of 290 0 0 GHz (at 15.3 GHz). For low-temperature cofired ceramic technology applications, the sintering temperature of the LRG high-entropy ceramic was reduced to 900 degrees C by the addition of 3 wt% H3BO3, which exhibited outstanding microwave dielectric properties (epsilon(r) = 7.6, Qxf = 11700 GHz, and Tau f = -7.4 ppm/ degrees C) and a good chemical compatibility with silver. (C) 2021 Published by Elsevier Ltd on behalf of Chinese Society for Metals.

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