Mn doped multiferroic in Ga0.97Nd0.03FeO3electroceramics

GaFeO3 and (Ga0.97Nd0.03)(Fe1-xMnx)O3 (where x = 0.01-0.03)are synthesized by ceramic method. X-ray diffractometer (XRD), Field Emission Scanning Electron Microscope (FESEM), electrical properties (such as dielectric, impedance, modulus, and conductivity), P-E loop (polarization) and magnetic studies are carried out to investigate the structural, microstructural, electrical and multiferroic properties of the materials. The XRD peaks of all the specimens have pure phases with an orthorhombic crystal structure bearing Pc21n space group as obtained from the Rietveld refinement. Variation of dielectric constant with temperature represents that GaFeO3 and the doped samples exhibits dielectric anomaly well above the room temperature. It is also noticed that transition temperature increases with the increment of Mn content. The complex impedance plot exhibits two semicircles, which represents the presence of bulk and grain boundary effects. The modulus spectroscopy validates the existence of a non-Debye type of relaxation. P-E loop and PUND analysis at room temperature confirms the presence of weak ferroelectricity in the materials. However, ferroelectric property is enhanced with the increase of Mn content.

Automated summary

The GaFeO3 and doped samples were synthesized by ceramic method and investigated for their structural, microstructural, electrical, and multiferroic properties. The doped samples showed significantly improved dielectric and ferroelectric properties, with the presence of a non-Debye type of relaxation.