Adiabatic theory of SET and RESET transitions

We develop a phenomenological theory of pulse induced phase transformations behind the SET (from high to low resistive state) and RESET (backward) processes in nonvolatile memory. We show that both can evolve in the adiabatic regime with energy deposition time much shorter than that of thermalization. They are, however, different by the operating modes: voltage source driven for SET and current source driven for RESET. The characteristic temperatures and transition rates are expressed through material and process parameters.

Automated summary

A phenomenological theory is developed to explain the pulse induced phase transformations in nonvolatile memory. It is found that both SET and RESET processes can evolve in the adiabatic regime with different operating modes, driven by voltage source and current source respectively. The characteristic temperatures and transition rates are determined by material and process parameters.