Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 859, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.157810
Keywords
Ga2O3; Films MOCVD; Crystal; GaN; Sapphire
Categories
Funding
- National key Research and Development Program of China [2018YFB040650]
- Fundamental Research Funds for the Central Universities [JB181108]
- National Natural Science Foundation of China [61774116, 61904139, 61974112, 61974115]
- Wuhu and Xidian University special fund for industry-university-research cooperation [XWYCXY012019002]
- 111 Project [B12026]
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Beta-Ga2O3 films were grown on epi-GaN/sapphire substrates at different temperatures by low pressure MOCVD. The crystal structure, surface morphology, and element chemical state were influenced by temperature. Higher temperature led to improved crystal quality and surface morphology, as confirmed by XRD, AFM, and SEM analyses.
In this paper,beta-Ga2O3 films were grown on epi-GaN/sapphire (0001) substrates at 600,700 and 800 degrees C by low pressure MOCVD, respectively.And the influences of temperature on the crystal structure, surface morphology and element chemical state were investigated.XRD analysis found that beta-Ga2O3 films were preferentially grown along the (-201) crystal plane, and crystal quality of the films improved with increasing temperature.AFM and SEM indicated that the surface morphology of films was obviously changed with the increasing temperature, and the surface became compact and flat.The FWHM value of XRD rocking curve at 800 degrees C less than those grown at 600 and 700 degrees C, indicating that the beta-Ga2O3 film grown at 800 degrees C has better crystal quality.XPS showed that the intensity of the Ga 2p, Ga 3d and O 1s peaks increased with temperature, and epitaxial relationship of beta-Ga2O3 was confirmed by HRTEM, consistent with the XRD results. (C) 2020 Elsevier B.V. All rights reserved.
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