Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 860, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.158384
Keywords
Thermoelectric materials; Semiconductors; Mechanical alloying; Sintering; Impurities in semiconductors
Categories
Funding
- Young Research Group Leader Program
- European Astronaut Centre of the European Space Agency
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alpha-MgAgSb has been identified as a promising thermoelectric material with peak performance around 300 degrees C. Optimal synthesis of the material can reduce impurities and improve thermoelectric performance.
alpha-MgAgSb has been identified as promising thermoelectric material, with peak performance around 300 degrees C, filling the gap between low- and high-temperature thermoelectric materials. The complexity of the Mg-Ag-Sb phase diagram and the sensitivity of the MgAg-Sb synthesis process often leads to impurities appearing in the final samples, which reduce the thermoelectric figure of merit zT. Using a two-step ball milling process, we show that the extent of the AgMg precursor formation has a direct effect on the final composition, mainly with respect to the dyscrasite (Ag3Sb) content. We study how extending the first ball milling step, adding a AgMg sintering step before the second ball milling step or reducing the Ag particle size each affect the overall formation of AgMg. It is shown that lower Ag wt% in said precursor results in lower Ag3Sb content in the final samples, achieving < 1 wt% Ag3Sb when Ag < 1 wt% (in the precursor). This leads to a 23% improvement of zT between 300 and 563 K and a peak value of similar to 1.2 at 500 K. This shows that the complete conversion of Mg and Ag into AgMg is the key for high performance alpha-MgAgSb. (C) 2020 Elsevier B.V. All rights reserved.
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