Photovoltaic conversion enhancement of a transparent NiO/CdO/ZnO pn junction device with a CdO transition layer

A transparent NiO/CdO/ZnO pn junction film device with a CdO transition layer is prepared via a simple continuous sol-gel and sputtering method. Here, the ZnO is prepared via a simple sol-gel method, the CdO transition layer is also deposited via the sol-gel method on the surface of the ZnO film, and subsequently, the dense NiO film is deposited via the sputtering method on the surface of the CdO transition layer. As revealed, the as-prepared transparent device exhibits a high transmittance of similar to 75%, obvious photovoltaic conversion enhancement (photocurrent) of similar to 10(4) (9600)-fold compared with the unmodified device, and better stability during 6000 cycles, which can be mainly ascribed to the CdO transition layer. Thus, the appropriate Fermi level can provide an ideal channel for charge carrier transport, and the visible light response can increase the number of photogenerated charge carriers. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

A transparent NiO/CdO/ZnO pn junction film device with a CdO transition layer was prepared using a simple sol-gel and sputtering method, showing high transmittance, significant photovoltaic conversion enhancement, and improved stability, mainly attributed to the CdO transition layer's role in facilitating charge carrier transport and increasing visible light response.