Low temperature growth of In2O3 films via pulsed laser deposition with oxygen plasma

In2O3 films were deposited on c-plane sapphire substrates by using pulsed laser deposition (PLD) without and with oxygen plasma at various growth temperature. The crystal structure, optical properties and surface morphologies were determined by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometer and atomic force microscope. XRD analysis revealed that all films have the body-centered cubic structure with a preferable (222) orientation. The results of XRC, Raman spectroscopy and spectrophotometer prove the superiority of plasma-assisted PLD. The low temperature growth of crystal In2O3 film paves the way to be compatible with the established silicon microfabrication processes.

Automated summary

In this study, In2O3 films were deposited on c-plane sapphire substrates using different methods, and their properties were analyzed by XRD, Raman spectroscopy, and spectrophotometer, revealing the superiority of plasma-assisted PLD technology. The successful low-temperature growth of crystal In2O3 films paves the way for compatibility with established silicon microfabrication processes.