Electrically conductive silicon oxycarbide thin films prepared from preceramic polymers

This work focuses on silicon oxycarbide thin film preparation and characterization. The Taguchi method of experimental design was used to optimize the process of film deposition. The prepared ceramic thin films with a thickness of c. 500 nm were characterized concerning their morphology, composition, and electrical properties. The molecular structure of the preceramic polymers used for the preparation of the ceramic thin films as well as the thermomechanical properties of the resulting SiOC significantly influenced the quality of the ceramic films. Thus, an increase in the content of carbon was found beneficial for the preparation of crack-free thin films. The obtained ceramic films exhibited increased electrical conductivity as compared to monolithic SiOC of similar chemical composition. This was shown to correlate with the unique hierarchical microstructure of the SiOC films, which contain large oxygen-depleted particles, mainly consisting of highly graphitized carbon and SiC, homogeneously dispersed in an oxygen-containing amorphous matrix. The matrix was shown to also contain free carbon and to contribute to charge carrier transport between the highly conductive large particles. The ceramic thin films possess electrical conductivities in the range from 5.4 to 8.8 S/cm and may be suitable for implementation in miniaturized piezoresistive strain gauges.

Automated summary

This study focuses on the preparation and characterization of silicon oxycarbide thin films, optimizing the deposition process using the Taguchi method. It was found that increasing carbon content is beneficial for crack-free film preparation and resulting ceramic films have higher electrical conductivity, suitable for use in miniaturized piezoresistive strain gauges.