4.7 Article

Dielectric Relaxation and Magnetic Structure of A-Site-Ordered Perovskite Oxide Semiconductor CaCu3Fe2Ta2O12

Journal

INORGANIC CHEMISTRY
Volume 60, Issue 10, Pages 6999-7007

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.inorgchem.0c03229

Keywords

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Funding

  1. Helmholtz Association
  2. Karlsruhe Institute of Technology (KIT)
  3. Reunion Grant for Research Alumni of KIT
  4. Natural Science Foundation of Guangxi [FA198015, GA245006, BA245069, BA297029]
  5. High Level Innovation Team and Outstanding Scholar Program of Guangxi Institutes
  6. Key Laboratory of RF Circuit and System, Ministry of Education
  7. Key Laboratory of Large Scale Integrated Design of Zhejiang Province

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A new perovskite oxide semiconductor CaCu3Fe2Ta2O12 was synthesized with high-pressure and high-temperature method, exhibiting a quadruple perovskite structure with ordered A-sites and partially ordered B-sites. The compound shows antiferromagnetic coupling between Fe3+ spins and ferromagnetic coupling between Cu2+ spins, leading to spin ordering at around 150 K. The material has a high dielectric permittivity of approximately 2500 at room temperature, with two dielectric relaxations observed - Debye-like relaxation attributed to charge carriers trapped in oxygen vacancies at low temperatures, and Maxwell-Wagner polarization relaxation at high temperatures. Is is a new magnetic semiconductor with A-site ordering intercorrelated with second-order Jahn-Teller distortion, providing opportunities for designing novel perovskite oxides with attractive magnetic and dielectric properties.
A new perovskite oxide semiconductor, CaCu3Fe2Ta2O12, was synthesized through a high-pressure and high-temperature approach. The compound possesses an Im (3) over bar space group, where it crystallizes to an A-site-ordered but B-site partial ordered quadruple perovskite structure. Spin ordering occurs around 150 K owing to the antiferromagnetic coupling between Fe3+ spins and ferromagnetic coupling between Cu2+ spins. The room-temperature dielectric permittivity of CaCu3Fe2Ta2O12 was measured to be approximately 2500 at 1 kHz. More importantly, isothermal frequency-dielectric spectroscopy demonstrates the existence of two dielectric relaxations. Debye-like relaxation is attributed to charge carriers trapped among the oxygen vacancies at low temperatures and Maxwell-Wagner polarization relaxation at high temperatures. CaCu3Fe2Ta2O12 is a new magnetic semiconductor, where A-site ordering is intercorrelated with second-order Jahn-Teller distortion. These findings offer opportunities to design novel perovskite oxides with attractive magnetic and dielectric properties.

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