Spreading Operation Frequency Ranges of Memristor Emulators via a New Sine-Based Method

The operation frequency of memristor seriously affects its applications in high-frequency working conditions. In this article, a new method using a sine-based function instead of the linear term in memristor models to spread the operation frequency ranges of memristor emulators is proposed. Via using this method on a flux-controlled memristor with smooth continuous cubic function as an example, research shows that the operation frequency range of this improved flux-controlled memristor is spread greatly. In particular, the improved memristor can still display an excellent pinched hysteresis loop even when the operation frequency is up to a few gigahertz, which is higher than most of the previously reported memristor emulators. The typical dynamic characteristics and the operation frequency range of the improved memristor are studied theoretically and numerically. The circuit simulations and physical experiments agree well with the theoretical analyses, which together demonstrate the effectiveness of the proposed methodology. Then, the improved memristor is applied to realize a chaotic oscillator to show its practical applications. In addition, the new method has universality, and it can be used by many other existing memristor emulators for spreading their operation frequency ranges.

Automated summary

This article proposes a new method using a sine-based function to extend the operation frequency range of memristor emulators by replacing the linear term in memristor models. Through this method, the operation frequency range of a flux-controlled memristor has been greatly improved, allowing it to display excellent performance even at high frequencies. The effectiveness of the proposed methodology is demonstrated through theoretical and numerical studies, circuit simulations, and physical experiments.