Journal
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume 34, Issue 2, Pages 140-144Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TSM.2021.3065075
Keywords
Elemental imaging; semiconductor manufacturing process; contamination control; patterned silicon wafer; laser ablation-ICP-MS
Categories
Funding
- National Research Foundation of Korea (NRF) - Korea Government (MSIT) [2018R1D1A1B07048110]
- Commercialization Promotion Agency for R&D Outcomes (COMPA) - Ministry of Science and ICT (MSIT) (2020-Development of Tandem ICP-QMS and Analysis Method)
- National Research Foundation of Korea [2018R1D1A1B07048110] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
This study utilized LA-ICP-MS to investigate the imaging of metal ions and nanoparticles on a structured silicon surface. Results showed that multi-elemental contaminants can be successfully imaged.
In this study, the imaging of metal ions and nanoparticles deposited on a structured silicon surface was investigated using a laser ablation-inductively coupled plasmamass spectrometry (LA-ICP-MS). For application, 8 x 8 Petridish pillars, each with a diameter of 250 mu m and height of 300 mu m, were constructed on a silicon wafer. The etched pillar surface took a droplet of approximately 4.3 nL aqueous solution from a capillary tip through the surface-liquid attraction. The dissolved materials were found at the intersecting edge of pillar bottom after evaporation, and their positions were matched with the peaks of elements in the mass spectrum for imaging. Results suggest that the trace contaminants in the cleaning solution are gathered at the intersecting edges of the patterned wafer, and the multi-elemental images of the contaminants can be successfully obtained using LA-ICP-MS.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available