Conducted Noise Simulation on AC-DC Converter Using SiC-MOSFET

Simulations performed from simpler and more accurate modeling help us to clarify the path and cause of noise and design filters that reduce common-mode noise. This article describes two types of simple simulation methods for the conducted noise in an ac-dc converter using SiC-MOsFET, namely the analysis of high-frequency leakage current and the impedance characteristic analysis simulating the noise path, and shows the accuracy and effectiveness of the simulation by comparing the experimental and simulation results. The analysis of high-frequency leakage current is required measurement of the leakage current, but does not require an impedance analyzer. The impedance characteristic analysis must require an impedance analyzer, but does not have to operate in the actual device and measure the leakage current. In two methods, the error between the experimental and simulation results of the disturbance voltage is 10 dB, and the resonance point is closely simulated. Furthermore, this article describes a simulation reducing the conducted noise using modeled electromagnetic interference filters.

Automated summary

The article presents two simple simulation methods for conducted noise in an ac-dc converter using SiC-MOSFET, namely high-frequency leakage current analysis and impedance characteristic analysis. Comparing the experimental and simulation results shows a high level of accuracy and effectiveness in these simulation methods.