Empirical Large-Signal Modeling of mm-Wave FDSOI CMOS Based on Angelov Model

This article presents a systematic empirical modeling approach in fully depleted silicon-on-insulator (FDSOI) CMOS for large-signal simulation in power amplifier applications. The model is constructed from multibias S-parameter measurements up to 67 GHz. The frequency dispersions in transconductance and output conductance are addressed by two independent radio frequency (RF) current sources. Angelov's current formula is modified to adapt to the FDSOI transistors. Load-pull measurements are performed for the large-signal verification in a non-50-Omega environment. The model accurately predicts the nonlinear characteristics of the device under test and the harmonic components. The time-domain waveforms also show excellent agreement to the simulation.

Automated summary

This article introduces a systematic empirical modeling approach for large-signal simulation in FDSOI CMOS for power amplifier applications, constructed from multibias S-parameter measurements to address frequency dispersions. Load-pull measurements verified the accuracy of the model in predicting nonlinear characteristics and harmonic components of the device under test. Time-domain waveforms also showed excellent agreement with the simulation results.