Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 4, Pages 1975-1979Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3059817
Keywords
CNTFETs; Logic gates; Nonvolatile memory; Magnetic tunneling; MOSFET; Logic circuits; Integrated circuit modeling; Beyond-complementary metal-oxide semiconductor (CMOS); Carbon nanotube field-effect transistor (CNTFET); near-memory-computing; nonvolatile logic gates; spin transfer torque magnetic tunneling junction (STT-MTJ)
Funding
- National Natural Science Foundation of China [51602013, 11904014]
- Young Elite Scientists Sponsorship Program by China Association for Science and Technology (CAST) [2018QNRC001]
- International Mobility Project [B16001]
- Fundamental Research Funds for the Central Universities of China
- Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC)
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The integration of CNTFETs and STT-MTJs in nonvolatile logic circuits shows significant advantages, which is of great significance for the development beyond CMOS electronics.
The traditional von Neumann computing architecture based on metal-oxide field-effect-transistors (MOSFETs) is more and more incompetent for the increasing demand for computing speed and energy efficiency in the Internet of Things (IoT) and intelligent development. Carbon nanotube field-effect-transistors (CNTFETs) are expected to achieve significant energy efficiency benefits versus today's silicon-based FETs. In this article, we combine CNTFETs and spin-transfer torque magnetic tunneling junctions (STT-MTJs) to build near-memory computing circuits, whose high speed and low power consumption characteristics are shown through the investigation of three nonvolatile logic gates: The read speed of CNTFET/STT-MTJ nonvolatile logic circuit is approximately 40% of the MOSFET/ STT-MTJ analog circuit, and the total power consumption and read energy of the same logic circuit can be approximately saved 17%-37% compared with that of MOSFET/ STT-MTJ analog circuit. Our research shows the advantages of the integration of CNTFETs and STT-MTJs in the nonvolatile logic circuit, which has great significance for the development of beyond-complementary metal-oxide semiconductor (CMOS) electronics.
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