A Scalable, General Purpose Circuit Model for Vanadium Compensated, Semi-Insulating, Vertical 6H-SiC PCSS

6H-SiC photoconductive semiconductor switches (PCSS) are new alternative of high power microwave (HPM) or RF generators with the special potential of compactness, tunable frequency and pulse width due to the superior material properties. For PCSS behavior investigation including on-resistance and transient, optical absorption, carrier process, and circuit elements are commonly important issues. This brief builds the major physics framework from the expressions of these influence factors considering simplicity and reliability. According to the basic physics models, a scalable, general model of vanadium compensated, semi-insulating (VCSI), vertical 6H-SiC PCSS is constructed in PSpice. The experiments are performed to verify this circuit model. Consequently, the correspondence between the measured results and simulation results proves its applicability.

Automated summary

6H-SiC photoconductive semiconductor switches (PCSS) offer a new alternative for high power microwave or RF generators, with potential for compactness, tunable frequency, and pulse width. This study establishes a major physics framework based on the expressions of influencing factors, and constructs a scalable PCSS model in PSpice, validated through experiments. The correspondence between measured and simulated results confirms the applicability of the model.