4.7 Article

Deep-Subwavelength and High-Q Trapped Mode Induced by Symmetry-Broken in Toroidal Plasmonic Resonator

Journal

IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION
Volume 69, Issue 4, Pages 2122-2129

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TAP.2020.3026480

Keywords

Deep-subwavelength; metamaterials; microwave resonator; plasmonics; Q-factor

Funding

  1. National Natural Science Foundation of China [61701108, 61631007, 61871127, 61890544, 61735010, 61731010, 61722106]
  2. National Key Research and Development Program of China [2017YFA0700201, 2017YFA0700202, 2017YFA0700203]
  3. Fundamental Research Funds for the Central Universities [2242020R20001]
  4. 111 Project [111-2-05]
  5. Fund for International Cooperation and Exchange of the National Natural Science Foundation of China [61761136007]

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The study introduces a novel toroidal plasmonic resonator that tightly compacts all resonance modes and reduces radiation loss, achieving a high quality factor. A trapped mode is excited by introducing a slit perturbation, doubling the confinement effect. The on-chip excitation of the trapped mode is analyzed, showing good agreement between experimental results and numerical simulations.
We propose a toroidal plasmonic resonator composed of double-layer concentric inward and outward spoke patterns, which tightly compacts all Mie resonance modes while reduces the radiation loss. Introducing a slit perturbation to the top spoke to break the in-plane symmetry, a trapped mode is excited and the confinement is double folded. The trapped mode behaves as a mixture of the electric and magnetic plasmon dipoles, realizing a quality factor (Q-factor) of 104.8 within the diameter of 1/20 wavelength. On-chip excitation of the trapped mode is analyzed. Experimental results agree well with numerical simulations. The microstrip compatible structure, outstanding compactness, and high Q-factor of the proposed plasmonic resonator will find significant applications in fundamental cavity electrodynamics and on-chip microwave sensing.

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