Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 33, Issue 9, Pages 429-432Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2021.3064551
Keywords
InAs/GaSb superlattice; long-wavelength infrared; device physics; metal-organic chemical vapor deposition
Funding
- National Natural Science Foundation of China [61874179, 61804161, 62074156]
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High-performance long-wavelength InAs/GaSb superlattice infrared photodetectors grown by metal-organic chemical vapor deposition exhibit diffusion-limited behavior, with the optimal device showing excellent performance at 77 K and a reverse bias of -0.1 V. Increasing absorber doping concentration from 5 x10(15) to 5x10(16) cm(-3) results in reduced dark current, decreased quantum efficiency, and a blue-shift of the cutoff wavelength.
High-performance long-wavelength InAs/GaSb superlattice infrared photodetectors grown by metal-organic chemical vapor deposition are reported. Diffusion-limited behavior has been achieved for three devices with different doping concentration of the absorbers. Increasing the absorber doping concentration from 5 x10(15) to 5x10(16) cm(-3) causes reduction of the dark current, decrease of the quantum efficiency, and blue-shift of the cutoff wavelength. The optimal device shows a 50% cutoff wavelength around 8.6 mu m, a dark-current density of only 6.8x 10(-6) A/cm(2) and a peak specific detectivity of 1.4x 10(12)cm.root Hz.W-1 at 77 K and a reverse bias of -0.1 V.
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