Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 56, Issue 5, Pages 1553-1564Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2020.3048715
Keywords
Doherty amplifier; gallium arsenide (GaAs) HBT; load-modulated balanced amplifier (LMBA); monolithic microwave integrated circuit (MMIC); power amplifier (PA); power back-off (PBO) capability
Categories
Funding
- Australian Research Council [DE160101032]
- China Scholarship Council
- Australian Research Council [DE160101032] Funding Source: Australian Research Council
Ask authors/readers for more resources
This article introduces a method of designing power amplifiers (PA) using load-modulated balanced amplifier (LMBA) architecture. PAs designed with this method show excellent performance in terms of high efficiency, high output power, and support for multiple signal modulation schemes.
In this article, the design of a power amplifier (PA) using a simple but effective architecture, namely, load-modulated balanced amplifier (LMBA), is presented. Using this architecture for PA design, it can achieve not only a relatively high saturated output power but also an excellent efficiency enhancement at the power back-off (PBO) region. To prove that the presented approach is feasible in practice, a PA is designed in a 1-mu m gallium arsenide (GaAs) HBT process. Operating under a 5-V power supply, the PA can deliver more than 31-dBm saturated output power with 36% collector efficiency (CE) at 5 GHz. Moreover, it also achieves 1.2 and 1.23 times CE enhancement over an idealistic Class-B PA at 6- and 9-dB PBO levels, respectively. Finally, the designed PA supports 64-quadrature amplitude modulation (QAM) with 80 Msys/s at 22-dBm average output power while still maintaining an error vector magnitude (EVM) and adjacent channel power ratio (ACPR) better than -29.5 dB and -29.4 dBc, respectively.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available