Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (C-OSS) in these transistors severely limits their application at high switching frequencies. In this work we report the observation of unexpected resonances in GaN-on-Si HEMTs. These high-frequency resonances lead to considerable energy losses in fast charging and discharging of the C-OSS during switching transients. We propose a simplewafer-level measurement technique to evaluate such losses at the epitaxy level, prior to the transistor fabrication. Experimental results from this technique revealed that the Silicon substrate is the main origin of these losses. Such wafer-level evaluation of C-OSS losses opens opportunities to characterize and optimize epitaxies for future power devices, especially those operating at high switching frequencies.

Automated summary

The study discovered unexpected resonances in GaN-on-Si HEMTs, leading to energy losses in C-OSS. A wafer-level measurement technique was proposed to evaluate these losses, revealing the Silicon substrate as the main origin.