High Performance β-Ga2O3 Solar-Blind Metal-Oxide-Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process

This letter demonstrates a high performance beta-Ga2O3 solar-blind metal-oxide-semiconductor field-effect phototransistor (SBPT) with Hafnium Oxide (HfO2) Gate Dielectric. The SBPT shows a high Photo-to-dark-current ratio (PDCR) of 6.9 x 10(7), an l(254) (nm)/ l(365) (nm) rejection ratio of 6.0 x 10(7) combined with an external quantum efficiency (EQE) of 6.4 x 10(7) %. In addition, benefit from stronger control capability of the HfO2 based gate structure, the fabricated SBPT reaches a record detectivity (D*) of 1.1 x 10(19) Jones and ultrahigh responsivity (R) of 1.4 x 10(7) A/W. Furthermore, short decay time (tau(d)) is obtained to be as low as 16 ms. These outstanding properties indicate that SBPT is promising for the solar-blind detection.

Automated summary

This study presents a high-performance solar-blind metal-oxide-semiconductor field-effect phototransistor (SBPT) with outstanding properties such as high photo-to-dark current ratio, ultrahigh responsivity, and record detectivity. The SBPT shows great potential for solar-blind detection.