Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 5, Pages 743-746Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3070392
Keywords
Humidity; Silicon compounds; Gallium nitride; Detectors; Reflectivity; Photoconductivity; Optical fiber sensors; Gallium nitride; optoelectronic integration; micro humidity sensor
Categories
Funding
- National Natural Science Foundation of China [62004088, 12074170]
- Basic and Applied Basic Research of Guangdong Province [2019A1515110772]
Ask authors/readers for more resources
A micro humidity sensor based on a GaN chip with silica opal is fabricated, providing a linear relationship, compact size, low cost, high repeatability, and ease of integration and operation.
The fabrication of a micro humidity sensor based on a GaN chip with silica opal is reported. The GaN chip containing InGaN/GaN multi-quantum well provides the two key functions of light emission and detection and the emitted light can be directly coupled into and out of the humidity-sensitive opal through the transparent sapphire substrate. The novel chip-scale integration scheme fully eliminates the complex assembly of external optical elements. The measured photocurrent signal quantitatively reflects the humidity change and has a linear relation of 0.24 mu A/% over a wide humidity range of 10-90 %. The developed micro-sensor possesses the advantages of compact size, low cost, high repeatability, and ease of integration and operation, which paves the way for its widespread adoption in humidity sensing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available