Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 5, Pages 696-699Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3069837
Keywords
Germanium; Resistance; Junctions; Hafnium oxide; Electrodes; Dielectrics; Switches; Ferroelectric; tunneling junction; FTJ; oxygen vacancy; memoristor; tunneling electroresistance
Categories
Funding
- National Key Research and Development Project [2018YFB2202800, 2018YFB2200500]
- National Natural Science Foundation of China [62025402, 62090033, 91964202, 92064003, 61874081, 62004149]
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An amorphous ZrO2 based tunneling junction memristor (TJM) demonstrated a tunneling electroresistance (TER) ratio above 400, attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies (V-O+) and negative charges near the ZrO2/semiconductor interface. The ferroelectric-like behaviors characterized by a polarization-voltage test in ZrO2 TJM showed excellent performance under various conditions.
An amorphous ZrO2 based tunneling junction memristor (TJM) with a tunneling electroresistance (TER) ratio above 400 is demonstrated. It is attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies (V-O(+)) and negative charges near the ZrO2/semiconductor interface. The ferroelectric-like behaviors attributed to the voltage-modulated switching of the dipoles consisting of V-O(+) and negative charges in ZrO2 are characterized by a polarization-voltage test. The ZrO2 TJM achieves a TER ratio above 400 under 2.5/-1.5 V at 100 ns write/erase pulse condition, over 10(4) cycles program/erase endurance, and >10(4) s data retention.
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