Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 5, Pages 645-648Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3068336
Keywords
Germanium; Oxidation; MOSFET circuits; Logic gates; Fluids; Curve fitting; Voltage control; Ge nMOSFET; supercritical fluid treatment; cosolvent effect; oxygen vacancy
Categories
Funding
- Ministry of Science and Technology, Taiwan [MOST-108-2221-E-007-004-MY3]
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A novel low temperature supercritical phase fluid treatment with H₂O₂ cosolvent can lead to significant improvements on Ge nMOSFET by reducing oxygen vacancy and unstable oxidation states, resulting in a device with low equivalent oxide thickness, reduced gate leakage current, high on-current, very low subthreshold swing, high on/off current ratio, small hysteresis, low interface trap density, excellent uniformity, and reliability characteristics.
Significant improvements on Ge nMOSFET can be achieved by a novel low temperature supercritical phase fluid treatment with H2O2 cosolvent. Thanks to the reduction of oxygen vacancy and unstable oxidation states, devices with the proposed treatment exhibit a low equivalent oxide thickness of 0.67 nm, 2-order reduction on gate leakage current, 7 times improvement on on-current, very low subthreshold swing of 79 mV/dev, high on/off current ratio, small hysteresis of 43.3 mV, low interface trap density, excellent uniformity and reliability characteristics.
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