High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was successfully fabricated by using a high-quality n(-)-GaN drift layer with a precisely-controlled n-type doping. A high current on/off ratio of 10(10), an ideality factor of 1.03, a low specific on-resistance of 1.41 m Omega.cm(2), and a relatively high breakdown voltage (BV) of 250 V have been achieved for the SBD without edge termination. Furthermore, with an Argon-implanted termination, the as fabricated GaN-on-Si SBD shows a record high BV of 405 V, yielding a critical electric field of similar to 2 MV/cm, while the forward conduction characteristics are well maintained.

Automated summary

A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was fabricated successfully with a high-quality n(-)-GaN drift layer and precisely-controlled n-type doping, achieving a high current on/off ratio, low specific on-resistance, and relatively high breakdown voltage. Additionally, with an Argon-implanted termination, a record high breakdown voltage of 405 V was achieved while maintaining good forward conduction characteristics for the GaN-on-Si SBD.