Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 4, Pages 509-512Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3056445
Keywords
beta-Ga2O3; nanomembrane; wet-etching; transfer-print; band offset; diode
Categories
Funding
- National Key Research and Development Program [2017YFB0405002]
- S&T Challenging Project [2016003]
- National Natural Science Foundation of China [61574082, 61621064, 61822404, 61991443, 51561165012]
- China Postdoctoral Science Foundation [2018M640129]
- Beijing National Research Center for Information Science and Technology [BNR2019ZS01005, BNR2019RC01006]
- Tsinghua University Initiative Scientific Research Program [20193080004]
- Research Grants Council of Hong Kong [N_CUHK415/15]
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In this study, a high-performance Ga2O3-based heterojunction diode was successfully fabricated using lift-off and transfer-print techniques. The diodes exhibited excellent electrical properties, indicating a new pathway for the fabrication of Ga2O3 heterojunctions and bipolar devices.
In this letter, a 400-nm-thick beta-Ga2O3 nanomembrane is extracted from an n-Ga2O3-on-silicon wafer by wet etching, and then transferred to a p-GaN/ sapphire wafer by transfer-print technique to fabricate n-Ga2O3/p-GaN heterojunction diodes. X-ray photoelectron spectroscopy (XPS) measurement is used to accurately confirm that the valence-band offset of the heterojunction is 1.41 +/- 0.07 eV. The diodes exhibit excellent electrical properties including high rectification ratio (3.85 x 10(5) at +/- 5 V) and low reversed current density (1.51 x 10(-7) A.cm(-2) at -5 V). The results show that the lift-off and transfer-print processes pave a new way for fabricating high-performance Ga2O3-based heterojunctions and bipolar devices.
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