4.5 Review

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*

Journal

CHINESE PHYSICS B
Volume 30, Issue 5, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/abeedf

Keywords

universal memory; optoelectronic hybrid storage; phase-change material; phase-change random access memory

Funding

  1. National Natural Science Foundation of China [21773291, 61904118, 22002102]
  2. Natural Science Foundation of Jiangsu Province, China [BK20190935, BK20190947]
  3. Natural Science Foundation of the Jiangsu Higher Education Institutions of China [19KJA210005, 19KJB510012, 19KJB120005, 19KJB430034]
  4. Fund from the Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices [SZS201812]
  5. Science Fund from the Jiangsu Key Laboratory for Environment Functional Materials
  6. State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

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The era of information explosion has brought about the need for long-term storage and random access, and nonvolatile resistive memories such as phase-change random access memory (PCRAM) are considered as the best solutions for next generation non-volatile memories. PCRAM, with its high speed, good data retention, high density, and low power consumption, has broad commercial prospects in in-memory computing applications.
The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of memory bottleneck. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.

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