Journal
CHINESE PHYSICS B
Volume 30, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/abf640
Keywords
ion implantation; defect evolution; ion-slicing; damaged band
Categories
Funding
- National Key R&D Program of China [2017YFE0131300]
- National Natural Science Foundation of China [61874128, 61851406, 11705262]
- Frontier Science Key Program of Chinese Academy of Sciences [QYZDY-SSW-JSC032, ZDBS-LYJSC009]
- Chinese-Austrian Cooperative RD Project [GJHZ201950]
- Program of Shanghai Academic Research Leader [19XD1404600]
- K. C. Wong Education Foundation [GJTD-2019-11]
- NCBiR within the Polish-China [WPC/130/NIR-Si/2018]
Ask authors/readers for more resources
The evolution of defects in InP with 75 keV H+ and 115 keV He+ implantation at room temperature was investigated. It was found that He+ implantation caused wider damage distribution and higher out-of-plane strain compared to H+ implantation in InP. Furthermore, after annealing, H+ implanted InP did not exhibit blistering or exfoliation, while the He molecules formed large bubbles that created blisters at high fluence.
The defect evolution in InP with the 75 keV H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP. After annealing, the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H-2 molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
