4.6 Article

Can a Procedure for the Growth of Single-layer Graphene on Copper be used in Different Chemical Vapor Deposition Reactors?

Journal

CHEMISTRY-AN ASIAN JOURNAL
Volume 16, Issue 11, Pages 1466-1474

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/asia.202100199

Keywords

copper foil; graphene; chemical vapor deposition; reactors; standardization

Funding

  1. KAUST [URF/1/3001-01-01, BAS/1/1346-01-01]
  2. KAUST Core Laboratories

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By studying two different types of thermal CVD reactors, a procedure for growing SLG on a cm(2)-scale was successfully developed after standardizing the copper foil surface.
In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for the growth of single-layer graphene (SLG). Despite the scattering of guidelines and procedures, variables such as the surface texture/chemistry of catalyst metal foils, carbon feedstock, and growth process parameters have been well-scrutinized. Still, questions remain on how best to standardize the growth procedure. The possible correlation of procedures between different CVD setups is an example. Here, two thermal CVD reactors were explored to grow graphene on Cu foil. The design of these setups was entirely distinct, one being a showerhead cold-wall type, whereas the other represented the popular tubular hot-wall type. Upon standardizing the Cu foil surface, it was possible to develop a procedure for cm(2)-scale SLG growth that differed only by the carrier gas flow rate used in the two reactors.

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