Journal
CHEMICAL PHYSICS LETTERS
Volume 770, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.cplett.2021.138454
Keywords
Core; shell quantum dot; Exciton; Oscillator strength; Transition lifetime
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The excitonic properties of compound semiconductors from group III-V and group II-VI materials were studied under external perturbations, specifically pressure and temperature. It was found that in an InP/ZnS quantum dot (core/shell), the radiative lifetime increases monotonically with the ratio of core to shell dot radius, reaching a saturation value and enhancing up to 9 ns. These findings have practical implications for tailoring excitonic optical transitions in nano-optical devices.
Excitonic properties of a compound semiconductor from group III-V and group II-VI materials are studied applying external perturbations. The simultaneous effects of pressure and temperature on exciton energies in an InP/ZnS quantum dot (core/shell) are found taking into account the ratio of radius of core/shell dot. The results bring out that the radiative lifetime enhances monotonically when the ratio of radius of core to shell quantum dot increases and it reaches a saturation value when Rc/Rs ? 1 and the radiative recombination lifetime enhances upto 9 ns. The results can be applied for tailoring the excitonic optical transitions in nano-optical devices.
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