4.7 Article

Defect-engineered 2D/2D hBN/g-C3N4 Z-scheme heterojunctions with full visible-light absorption: Efficient metal-free photocatalysts for hydrogen evolution

Journal

APPLIED SURFACE SCIENCE
Volume 547, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2021.149207

Keywords

Defect-engineered; hBN; g-C3N4; Z-scheme heterojunctions; Photocatalysts

Funding

  1. National Natural Science Foundation of China [11764018]
  2. Natural Science Foundation of Jiangxi Province [20202ACBL211004, 20192BAB212003]
  3. Science and Technology Planning Project of Ganzhou City

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By studying 2D/2D hBN/g-C3N4 nanocomposites with different types of defects, it was found that defect-induced Z-scheme vdW heterojunctions play a key role in enhancing photocatalytic performance. Compared to perfect structures, defective structures show stronger charge transfer and full visible-light response.
2D/2D hBN/g-C3N4 nanocomposites with good photocatalytic activity have been successfully prepared, and fortunately defected 2D material heterojunction opens up new possibilities for high-efficiency photocatalysts. However, its photocatalytic performance and mechanism in splitting water have not been thoroughly explored. Herein, using the state-of-theart TDHF-HSE06 method, 2D/2D hBN/g-C3N4 nanocomposites with different defected types were discussed in detail, including C atoms doping and natural point vacancies. We demonstrate that the defect-induced Z-scheme vdW heterojunction is a key for excellent photocatalytic performance. Compared to perfect hBN/g-C3N4, the defected hBN/g-C3N4 heterojunctions have stronger interfacial interaction with more than 20 times of charge transfer. And it even has full visible-light response due to the suitable band gap width. More importantly, the Z-scheme band edge potentials have perfect redox capacity for water splitting at both PH = 0 and 7. The findings not only explain the existing experimental phenomena, but also provide new insights into the design of high-efficiency metal-free photocatalysts.

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