Journal
APPLIED SURFACE SCIENCE
Volume 548, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2021.149272
Keywords
TMIn flow; Pressure; Surface morphology; Trench defects
Categories
Funding
- National Key R&D Program of China [2018YFB0406903, 2017YFB0405001, 2016YFB0400803, 2016YFB0401801]
- National Natural Science Foundation of China [62034008, 62074142, 62074140, 61974162, 61904172, 61874175]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB43030101]
- Youth Innovation Promotion Association of Chinese Academy of Sciences [2019115]
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The study found that increasing pressure can accelerate the incorporation of indium atoms while maintaining the surface morphology of the InGaN quantum well layer; decreasing the TMIn flow can improve the homogeneity and quality of the InGaN layer, while increasing pressure to keep the indium content unchanged.
Two series InGaN/GaN MQWs samples were prepared by metal-organic chemical vapor deposition (MOCVD) to study the effect of TMIn flow and pressure on structural parameters, emission propertied and surface morphology of InGaN well layer. This study revealed that both high In flow rate and high pressure will improve the incorporation of atoms undergoing material deterioration. However, an elevated pressure will expedite the incorporation of indium atoms while maintaining the surface morphology of InGaN well layer under low TMIn flow. For those InGaN QWs exhibiting fixed In composition and thickness, this study proposed to decrease the TMIn flow to improve the homogeneity and quality of InGaN layer, while increasing pressure to keep the In content unchanged.
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