Material proposal for 2D indium oxide

Realization of semiconductor materials at the two-dimensional (2D) limit can elicit exceptional and diversified performance exercising transformative influence on modern technology. We report experimental evidence for the formation of conceptually new 2D indium oxide (InO) and its material characteristics. The formation of 2D InO was harvested through targeted intercalation of indium (In) atoms and deposition kinetics at graphene/SiC interface using a robust metal organic chemical vapor deposition (MOCVD) process. A distinct structural configuration of two sub-layers of In atoms in atop positions was imaged by scanning transmission electron microscopy (STEM). The bonding of oxygen atoms to indium atoms was indicated using electron energy loss spectroscopy (EELS). A wide bandgap energy measuring a value of 4.1 eV was estimated by conductive atomic force microscopy measurements (C-AFM) for the 2D InO.

Automated summary

This study successfully demonstrated the formation of a novel 2D indium oxide, achieved through targeted intercalation and deposition of indium atoms at the graphene/SiC interface. A unique structural configuration with two sub-layers of indium atoms was observed, and bonding of oxygen atoms to indium atoms was confirmed. The 2D indium oxide exhibited a wide bandgap energy of 4.1 eV as estimated by conductive atomic force microscopy measurements.