Journal
APPLIED SURFACE SCIENCE
Volume 547, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2021.149117
Keywords
Carrier transport; Copper oxide quantum dot; Inorganic interfacial layer; Band alignment; MAPbI(3)
Categories
Funding
- National Key Basic Research Program of China (973 Program) [2015CB932203]
- National Natural Science Foundation of China [U1732126, 51872145, 51602161, 61874060, 61376023, 51861145301, 61874058]
- China Postdoctoral Science Foundation [2019M650120]
- Ministry of Education of China [IRT1148]
- National Synergetic Innovation Center for Advanced Materials (SICAM)
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD) [YX03001]
- Postgraduate Research &Practice Innovation Program of Jiangsu Province [KYCX18_0846, KYCX18_0869, KYCX18_0863, KYCX18_0842]
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Enhancing carrier transport by a copper oxide quantum dots interfacial layer in inverted perovskite solar cells boosts performance, leading to a 19.91% power conversion efficiency, a 14.6% increase compared to the control device.
Interfacial layer is deemed as an efficient approach to align the energy level and reduce the carrier recombination at the interfaces. Therefore, for the first time, a facile yet effective method to enhance carrier transport by copper oxide quantum dots (CuOx QDs) interfacial layer in inverted perovskite solar cells (PSCs) is developed. The high mobility of CuOx QDs interfacial layer could boost the performance of PSCs by providing a better electrical carrier transport. Furthermore, the higher crystallinity of perovskite layer on CuOx QDs layer reduced the charge trap state densities, which leads to an increase in carrier recombination resistance. As a result, our inverted PSCs exhibit a power conversion efficiency (PCE) of 19.91%, a 14.6% increment compared with the PCE of a control device. Our finding demonstrates the promise of enhancing carrier transport by interfacial layer for high-performance PSCs and expands choice of interfacial layer materials in PSCs.
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