Journal
APPLIED SURFACE SCIENCE
Volume 546, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2021.149052
Keywords
InGaN-LED; Ultrananocrystalline diamond; Nanopattern; Conductive layer; Raman; Electroluminescence
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Funding
- Ministry of Science and Technology of Taiwan [MOST108-2221-E-011-090, MOST109-2221-E-011-091]
- Epistar Co., Ltd.
- National Nano Device Laboratories, in Taiwan
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The study successfully grew N-doped UNCD conductive layer on InGaN-based LEDs using CNP enhanced nucleation, resulting in improved nucleation density and morphology. The LEDs exhibited a stable electroluminescence peak wavelength.
This study grew nitrogen doped ultrananocrystalline diamond (N-UNCD) conductive layer on InGaN-based light emitting diodes (LEDs) using the concave nanopattern (CNP) enhanced nucleation. The low nucleation density of the N-UNCD on bare LEDs (Br-LED) resulted in an island morphology. The nucleation density of the N-UNCD increased significantly from 1.8 x 10(8) cm(-2) for Br-LED to 3.6 x 10(9) cm(-2) for LEDs with a CNP density of 6.1 x 10(9) cm(-2) (CNP-LED). The N-UNCD preferred to nucleate inside the CNP during the initial growth stage. The N-UNCD islands then merged and grew laterally to form a continuous thin film within a thickness of 300 nm. The N-UNCD/CNP-LED exhibited a stable electroluminescence peak wavelength of similar to 447.1 nm in the injection current range of 10-100 mA. The decrease in the compressive stress due to removing the p-GaN layer (i.e. the CNP structure) resulted in a quantum confined Stark effect (QCSE) mitigation in the multi-quantum wells (MQWs). In addition, the lower turn on voltage caused a lower electric field in the MQWs and diminished the screen of the QCSE. The N-UNCD prepared by the proposed nucleation technique demonstrated a promising conductive layer for InGaN-based LEDs.
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